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MCP14E6/7/8
DC CHARACTERISTICS (OVER OPERATING TEMP. RANGE) (2) (CONTINUED)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Enable Function (ENB_A, ENB_B)
High-Level Input Voltage
Low-Level Input Voltage
Hysteresis
Enable Pull-up Impedance
Propagation Delay Time
Propagation Delay Time
V EN_H
V EN_L
V HYST
R ENBL
t D3
t D4
2.4
—
—
0.7
—
—
—
—
0.4
1.6
60
70
—
0.8
—
3.0
80
85
V
V
V
M Ω
ns
ns
V DD = 12V, Low-to-High Transition
V DD = 12V, High-to-Low Transition
V DD = 14V,
ENB_A = ENB_B = GND
V DD = 12V, Figure 4-3
V DD = 12V, Figure 4-3
Power Supply
Supply Voltage
V DD
4.5
—
18.0
V
Supply Current
I DD
I DD
I DD
I DD
I DD
I DD
I DD
I DD
—
—
—
—
—
—
—
—
1400
800
1300
1300
800
500
600
600
2200
1100
2000
2000
1200
600
900
900
μA
μA
μA
μA
μA
μA
μA
μA
V IN_A = 3V, V IN_B = 3V,
ENB_A = ENB_B = High
V IN_A = 0V, V IN_B = 0V,
ENB_A = ENB_B = High
V IN_A = 3V, V IN_B = 0V,
ENB_A = ENB_B = High
V IN_A = 0V, V IN_B = 3V,
ENB_A = ENB_B = High
V IN_A = 3V, V IN_B = 3V,
ENB_A = ENB_B = Low
V IN_A = 0V, V IN_B = 0V,
ENB_A = ENB_B = Low
V IN_A = 3V, V IN_B = 0V,
ENB_A = ENB_B = Low
V IN_A = 0V, V IN_B = 3V,
ENB_A = ENB_B = Low
Note 1:
2:
Switching times are ensured by design.
Tested during characterization, not production tested.
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V ≤ V DD ≤ 18V.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Specified Temperature Range
Maximum Junction Temperature
Storage Temperature Range
T A
T J
T A
-40
—
-65
—
—
—
+125
+150
+150
°C
°C
°C
Package Thermal Resistances
Thermal Resistance, 8L-6x5 DFN
Thermal Resistance, 8L-PDIP
Thermal Resistance, 8L-SOIC
θ JA
θ JA
θ JA
—
—
—
35.7
89.3
149.5
—
—
—
°C/W
°C/W
°C/W
Typical four-layer board with
vias to ground plane
? 2011 Microchip Technology Inc.
DS25006A-page 5
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